Synthesis and characterization of hybrid nanostructures P-N hetero junction materials

The ZnO/CuO/SnO2 hybrid nanostructures p-n heterojunction materials were successfully synthesized by 3-step chemical vapor deposition method on SiO/Si substrates. Cu, Zn and Sn powders were used as precursors and mixed with carbon charcoal. The precursors were heated at various temperatures and pressures under atmosphere of O2 and Ar gases. The prepared samples were investigated by field emission scanning electron microscope (FESEM), X-ray photoemission spectroscopy (XPS), and I-V characteristic curves. The results revealed the formation of CuO hollow microspheres with branching lines, ZnO nanowires, and SnO2 nanorods in which establish the three layers of the hetero-junctions. The I-V characteristics exhibited rectifying behavior of hetero-layered semiconductors. On the other hand, the three layers hybrid nanostructures p-n heterojunction materials were synthesized by 3-step chemical vapor deposition method without catalyst of carbon charcoal. The results showed the surface morphology of brain-coral ZnO hollow microspheres, ZnO nanocombs and nanopins and ZnO/SnO2 spike-shaped nanowires. The I-V characteristics presented rectifying and non-rectifying behavior of hetero-layered semiconductors. Moreover, the CuO/ZnO films p-n heterojunction materials were successfully fabricated by 2-step chemical vapor deposition and thermal evaporation methods on SiO/Si substrate. The samples were used to measure No2 gas response at temperatures of 100 ºC. The sensitivity of CuO/ZnO films sensor was better than that of CuO films and ZnO nanoparticles sensor.